TY - GEN
T1 - A flexible floating-gate organic thin-film transistor for detection of chemical species
AU - Caboni, A.
AU - Cambarau, W.
AU - Orgiu, E.
AU - Barbaro, M.
AU - Bonfiglio, A.
PY - 2008
Y1 - 2008
N2 - A novel free-standing flexible OFET able to detect pH changes in chemical solutions thanks to a functionalized floating-gate has been realized and successfully tested. The structure includes a control gate on one side of a Mylar foil (on which gold drain/source contacts are photolithographically patterned and a pentacene active layer deposited) and a gold floating-gate on the opposite side of the foil. The floating-gate is functionalized with thio-aminic groups and represents the active area of the device as such groups protonize proportionally to the concentration of H3O+ ions in the solution. Consequently, the control-capacitor and the charge immobilized on the active area concurrently set the actual gate voltage drop on the transistor insulating layer, thus modulating the drain current. Such a structure does not require a counter-electrode and insulates the OFET from the solution, thus the working mechanism is independent of the choice of semiconductor, gate or dielectric material.
AB - A novel free-standing flexible OFET able to detect pH changes in chemical solutions thanks to a functionalized floating-gate has been realized and successfully tested. The structure includes a control gate on one side of a Mylar foil (on which gold drain/source contacts are photolithographically patterned and a pentacene active layer deposited) and a gold floating-gate on the opposite side of the foil. The floating-gate is functionalized with thio-aminic groups and represents the active area of the device as such groups protonize proportionally to the concentration of H3O+ ions in the solution. Consequently, the control-capacitor and the charge immobilized on the active area concurrently set the actual gate voltage drop on the transistor insulating layer, thus modulating the drain current. Such a structure does not require a counter-electrode and insulates the OFET from the solution, thus the working mechanism is independent of the choice of semiconductor, gate or dielectric material.
UR - https://www.scopus.com/pages/publications/67649971515
U2 - 10.1109/ICSENS.2008.4716576
DO - 10.1109/ICSENS.2008.4716576
M3 - Conference contribution
AN - SCOPUS:67649971515
SN - 9781424425808
T3 - Proceedings of IEEE Sensors
SP - 859
EP - 862
BT - 2008 IEEE Sensors, SENSORS 2008
T2 - 2008 IEEE Sensors, SENSORS 2008
Y2 - 26 October 2008 through 29 October 2009
ER -