Analysis of energy losses for SiC and Si diodes in half-bridge modules and future applications

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

The aim of this paper is to show the reduction in energy losses obtained through experimentation when making use of Silicon Carbide (SiC) diodes instead of Si ones. In order to make the comparison as much accurate as possible both diodes were developed applying the same bonding and package techniques and were tested under exactly the same working conditions. Experimental voltage and current waveforms during the switching process and energy losses measurements are shown in the paper.

Original languageEnglish
Title of host publicationProceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011
Publication statusPublished - 2011
Event2011 14th European Conference on Power Electronics and Applications, EPE 2011 - Birmingham, United Kingdom
Duration: 30 Aug 20111 Sept 2011

Publication series

NameProceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011

Conference

Conference2011 14th European Conference on Power Electronics and Applications, EPE 2011
Country/TerritoryUnited Kingdom
CityBirmingham
Period30/08/111/09/11

Keywords

  • Energy losses
  • Schottky diode
  • Silicon Carbide SiC
  • Wide bandgap devices

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