Controlled lateral positioning of NV centres in diamond by CVD overgrowth

Nicola Lang; Niklas Mathes; Arne Götze; Philipp Reinke; Christoph Schreyvogel; Robert Iannucci; Christian Giese; Xavier Vidal; Peter Knittel

doi:10.1088/1402-4896/ad6f60

Controlled lateral positioning of NV centres in diamond by CVD overgrowth

Nicola Lang^*, Niklas Mathes, Arne Götze, Philipp Reinke, Christoph Schreyvogel, Robert Iannucci, Christian Giese, Xavier Vidal, Peter Knittel

^*Corresponding author for this work

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Abstract

A challenge to this day in the development of diamond devices for quantum applications is the laterally defined and closely spaced positioning of nitrogen-vacancy centres with exceptional coherence properties. Here, we demonstrate a maskless, implantation-free method for the controlled in-plane positioning of NV centres using a combination of focused ion beam (FIB) milling, plasma etching and nitrogen-doped diamond growth. The Ga⁺ ion beam milling resulted in 1 μm × 1 μm cavities with depths of up to 450 nm, each cavity exhibiting the four [111]-oriented diamond facets after pure hydrogen plasma treatment and a depth of 700 nm. Low-methane, nitrogen-doped chemical vapour deposition (CVD) overgrowth resulted in in situ formation of oriented NV ensembles, exclusively perpendicular to the {111}-planes.

Original language	English
Article number	105408
Journal	Physica Scripta
Volume	99
Issue number	10
DOIs	https://doi.org/10.1088/1402-4896/ad6f60
Publication status	Published - 1 Oct 2024

Keywords

CVD overgrowth
ion beam milling
nitrogen vacancy

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title = "Controlled lateral positioning of NV centres in diamond by CVD overgrowth",

abstract = "A challenge to this day in the development of diamond devices for quantum applications is the laterally defined and closely spaced positioning of nitrogen-vacancy centres with exceptional coherence properties. Here, we demonstrate a maskless, implantation-free method for the controlled in-plane positioning of NV centres using a combination of focused ion beam (FIB) milling, plasma etching and nitrogen-doped diamond growth. The Ga+ ion beam milling resulted in 1 μm × 1 μm cavities with depths of up to 450 nm, each cavity exhibiting the four [111]-oriented diamond facets after pure hydrogen plasma treatment and a depth of 700 nm. Low-methane, nitrogen-doped chemical vapour deposition (CVD) overgrowth resulted in in situ formation of oriented NV ensembles, exclusively perpendicular to the {111}-planes.",

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AU - Lang, Nicola

AU - Mathes, Niklas

AU - Götze, Arne

AU - Reinke, Philipp

AU - Schreyvogel, Christoph

AU - Iannucci, Robert

AU - Giese, Christian

AU - Vidal, Xavier

AU - Knittel, Peter

PY - 2024/10/1

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N2 - A challenge to this day in the development of diamond devices for quantum applications is the laterally defined and closely spaced positioning of nitrogen-vacancy centres with exceptional coherence properties. Here, we demonstrate a maskless, implantation-free method for the controlled in-plane positioning of NV centres using a combination of focused ion beam (FIB) milling, plasma etching and nitrogen-doped diamond growth. The Ga+ ion beam milling resulted in 1 μm × 1 μm cavities with depths of up to 450 nm, each cavity exhibiting the four [111]-oriented diamond facets after pure hydrogen plasma treatment and a depth of 700 nm. Low-methane, nitrogen-doped chemical vapour deposition (CVD) overgrowth resulted in in situ formation of oriented NV ensembles, exclusively perpendicular to the {111}-planes.

AB - A challenge to this day in the development of diamond devices for quantum applications is the laterally defined and closely spaced positioning of nitrogen-vacancy centres with exceptional coherence properties. Here, we demonstrate a maskless, implantation-free method for the controlled in-plane positioning of NV centres using a combination of focused ion beam (FIB) milling, plasma etching and nitrogen-doped diamond growth. The Ga+ ion beam milling resulted in 1 μm × 1 μm cavities with depths of up to 450 nm, each cavity exhibiting the four [111]-oriented diamond facets after pure hydrogen plasma treatment and a depth of 700 nm. Low-methane, nitrogen-doped chemical vapour deposition (CVD) overgrowth resulted in in situ formation of oriented NV ensembles, exclusively perpendicular to the {111}-planes.

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KW - ion beam milling

KW - nitrogen vacancy

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Controlled lateral positioning of NV centres in diamond by CVD overgrowth

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Keywords

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