Delay time and Hartman effect in strain engineered graphene

  • Xi Chen
  • , Zhi Yong Deng
  • , Yue Ban

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Tunneling times, including group delay and dwell time, are studied for massless Dirac electrons transmitting through a one-dimensional barrier in strain-engineered graphene. The Hartman effect, the independence of group delay on barrier length, is induced by the strain effect, and associated with the transmission gap and the evanescent mode. The influence of barrier height/length and strain modulus/direction on the group delay is also discussed, which provides the flexibility to control the group delay with applications in graphene-based devices. The relationship between group delay and dwell time is finally derived to clarify the nature of the Hartman effect.

Original languageEnglish
Article number173703
JournalJournal of Applied Physics
Volume115
Issue number17
DOIs
Publication statusPublished - 7 May 2014
Externally publishedYes

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