Innovative packaging solution for power and thermal management of wide-bandgap semiconductor devices in space applications

J. Barcena*, C. Merveille, J. Maudes, M. Vellvehi, X. Jorda, I. Obieta, C. Guraya, L. Bilbao, C. Jiménez, J. Coleto

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Devices based on wide-bandgap semiconductors such as SiC or GaN allow high power densities and elevated working temperatures. Here we present an innovative package for high-power electronics, within the framework of an ESA-contracted project. The paper shows the housing concept, design study, materials selection, manufacturing method and first test results. Materials are selected for their high thermal conductivity (TC) and low coefficient of thermal expansion (CTE). Several materials were selected: AlN was selected as substrate material, and novel metal-matrix composites (MMCs) based on Cu-Diamond and CuVapour Grown Carbon Nanofibres (VGCNFs) were evaluated as heat-sink materials. Subsequently, a complete bonding study between ceramic materials and the MMCs was performed. In order to obtain fully dense materials AlN was manufactured by pressureless sintering, while the MMCs parts were manufactured by hot-pressing. The MMCs powders were obtained by an electroless plating process. Preliminary characterisation of the housing and its parts show encouraging results as a solution for high-power devices working at temperatures up to 300 °C. TC near 500W/mK and CTEsof around 10 ppm/K. have been obtained. These are comparable to the state-of-the-art materials. Out-gassing, thermal cycling and hermeticity tests of the packages were performed. The presented new packaging solutions are showing great prorrise for space applications such as high -frequency power amplifiers for satellite communications and for radar transmitters, and have started to generate an interest from commercial space-systemmanufacturers.

Original languageEnglish
Title of host publicationAIAA 57th International Astronautical Congress, IAC 2006
PublisherAmerican Institute of Aeronautics and Astronautics Inc.
Pages5549-5557
Number of pages9
ISBN (Print)9781605600390
DOIs
Publication statusPublished - 2006
EventAIAA 57th International Astronautical Congress, IAC 2006 - Valencia, Spain
Duration: 2 Oct 20066 Oct 2006

Publication series

NameAIAA 57th International Astronautical Congress, IAC 2006
Volume8

Conference

ConferenceAIAA 57th International Astronautical Congress, IAC 2006
Country/TerritorySpain
CityValencia
Period2/10/066/10/06

Funding

The research group would like to thank ESA/ESTEC for the grant of project “Power and thermal management of wide bandgap semiconductors” Ref: AO4349 the results of which are the core of this paper. J. Barcena also thanks Education, University and Research Department of Basque Country government.

FundersFunder number
ESTECAO4349
European Space Agency

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