Mechanical and electrical properties Of SiO2 thin films r.f. sputtered on non-silicon substrates for mechanical sensors

A. García-Alonso; J. Artázcoz; E. Castaño; I. Obieta; F. J. Gracia

doi:10.1016/0924-4247(93)80012-6

Mechanical and electrical properties Of SiO₂ thin films r.f. sputtered on non-silicon substrates for mechanical sensors

A. García-Alonso^*
, J. Artázcoz
, E. Castaño
, I. Obieta
, F. J. Gracia

^*Corresponding author for this work

Centro de Estudios e Investigaciones Técnicas de Gipuzkoa (CEIT)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Th development of an SiO₂ insulator interlayer between a sensing NiC film and a stainless steel deformable substrate is reported. Both mechanical and electrical properties have been studied. Mechanical properties are strongly improved by increasing the substrate deposition temperature. Validity of the Agrawal and Raj equation for τ_c has been proved for SiO₂ films on stainless steel substrates. Good values for the critical deformation (ε_c = 0.07) and adhesion (critical shear strength between film and substrate, τ_c = 2.6 GPa) are obtained at 300 °C substrate deposition temperature. Breakdown voltages higher than 50 V, and isolation resistance greater than 5 GOHgr; (at 50 V, for 1 CM² film area), are obtained with 2.4 μm thick SiO₂ films over stainless steel ultrapolished substrates.

Original language	English
Pages (from-to)	57-60
Number of pages	4
Journal	Sensors and Actuators A: Physical
Volume	37-38
Issue number	C
DOIs	https://doi.org/10.1016/0924-4247(93)80012-6
Publication status	Published - 1993
Externally published	Yes

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title = "Mechanical and electrical properties Of SiO2 thin films r.f. sputtered on non-silicon substrates for mechanical sensors",

abstract = "Th development of an SiO2 insulator interlayer between a sensing NiC film and a stainless steel deformable substrate is reported. Both mechanical and electrical properties have been studied. Mechanical properties are strongly improved by increasing the substrate deposition temperature. Validity of the Agrawal and Raj equation for τc has been proved for SiO2 films on stainless steel substrates. Good values for the critical deformation (εc = 0.07) and adhesion (critical shear strength between film and substrate, τc = 2.6 GPa) are obtained at 300 °C substrate deposition temperature. Breakdown voltages higher than 50 V, and isolation resistance greater than 5 GOHgr; (at 50 V, for 1 CM2 film area), are obtained with 2.4 μm thick SiO2 films over stainless steel ultrapolished substrates.",

author = "A. Garc{\'i}a-Alonso and J. Art{\'a}zcoz and E. Casta{\~n}o and I. Obieta and Gracia, \{F. J.\}",

year = "1993",

doi = "10.1016/0924-4247(93)80012-6",

language = "English",

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TY - JOUR

T1 - Mechanical and electrical properties Of SiO2 thin films r.f. sputtered on non-silicon substrates for mechanical sensors

AU - García-Alonso, A.

AU - Artázcoz, J.

AU - Castaño, E.

AU - Obieta, I.

AU - Gracia, F. J.

PY - 1993

Y1 - 1993

N2 - Th development of an SiO2 insulator interlayer between a sensing NiC film and a stainless steel deformable substrate is reported. Both mechanical and electrical properties have been studied. Mechanical properties are strongly improved by increasing the substrate deposition temperature. Validity of the Agrawal and Raj equation for τc has been proved for SiO2 films on stainless steel substrates. Good values for the critical deformation (εc = 0.07) and adhesion (critical shear strength between film and substrate, τc = 2.6 GPa) are obtained at 300 °C substrate deposition temperature. Breakdown voltages higher than 50 V, and isolation resistance greater than 5 GOHgr; (at 50 V, for 1 CM2 film area), are obtained with 2.4 μm thick SiO2 films over stainless steel ultrapolished substrates.

AB - Th development of an SiO2 insulator interlayer between a sensing NiC film and a stainless steel deformable substrate is reported. Both mechanical and electrical properties have been studied. Mechanical properties are strongly improved by increasing the substrate deposition temperature. Validity of the Agrawal and Raj equation for τc has been proved for SiO2 films on stainless steel substrates. Good values for the critical deformation (εc = 0.07) and adhesion (critical shear strength between film and substrate, τc = 2.6 GPa) are obtained at 300 °C substrate deposition temperature. Breakdown voltages higher than 50 V, and isolation resistance greater than 5 GOHgr; (at 50 V, for 1 CM2 film area), are obtained with 2.4 μm thick SiO2 films over stainless steel ultrapolished substrates.

UR - https://www.scopus.com/pages/publications/0027612053

U2 - 10.1016/0924-4247(93)80012-6

DO - 10.1016/0924-4247(93)80012-6

M3 - Article

AN - SCOPUS:0027612053

SN - 0924-4247

VL - 37-38

SP - 57

EP - 60

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - C

ER -

Mechanical and electrical properties Of SiO₂ thin films r.f. sputtered on non-silicon substrates for mechanical sensors

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