@inproceedings{4f0e97479393459eb684576d44c2e590,
title = "Metal ion-doped sol-gel film for emulating synaptic activity and short-term non-volatile memory",
abstract = "We propose a hybrid device substituting the software synapse in artificial neural networks with an individual hardware transistor unit. The unit merges a silicon nanowire semiconductor channel with a metal-ion doped sol-gel film as hybrid gate of the transistor. The film, amorphous and transparent, shows a memristive property due to ion redistribution under bias, emulating synaptic plasticity with pulsed gate stimulation.",
keywords = "Non-volatile memory, Silicon nanowire-based field-effect transistor, Sol-gel",
author = "Khrystyna Nych and Eunhye Baek and Baek, \{Chang Ki\} and Bergoi Ibarlucea and Larysa Baraban and Gianaurelio Cuniberti",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 ; Conference date: 27-11-2019 Through 29-11-2019",
year = "2019",
month = nov,
doi = "10.1109/ICECS46596.2019.8964926",
language = "English",
series = "2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "795--798",
booktitle = "2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019",
address = "United States",
}