Sputtered silicon thin films for piezoresistive pressure microsensors

I. Obieta; F. J. Gracia

doi:10.1016/0924-4247(94)80075-8

Sputtered silicon thin films for piezoresistive pressure microsensors

I. Obieta^*
, F. J. Gracia

^*Corresponding author for this work

Centro de Estudios e Investigaciones Técnicas de Gipuzkoa (CEIT)

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Polycrystalline silicon thin films have been prepared by sputtering techniques, followed by a recrystallization treatment. These films can be used as sensing elements for pressure microsensors that have a semiconductor/ insulator/micromachined-silicon structure. Adjustments of the sensing-element properties, such as resistivity, gauge factor and temperature coefficients, can be made by doping with boron. Gauge factors (GFs) up to 30 and temperature coefficients of resistance (TCR) of 50 ppm/°C are feasible. Boron doping concentrations in the range 1 × 10¹⁸-1 × 10²⁰ cm^-3, corresponding to sheet resistances of 7 × 10⁶-100 Ω/□, have been investigated. Grain sizes and crystallite orientation are also included as microstructural properties.

Original language	English
Pages (from-to)	685-688
Number of pages	4
Journal	Sensors and Actuators A: Physical
Volume	42
Issue number	1-3
DOIs	https://doi.org/10.1016/0924-4247(94)80075-8
Publication status	Published - 15 Apr 1994
Externally published	Yes

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title = "Sputtered silicon thin films for piezoresistive pressure microsensors",

abstract = "Polycrystalline silicon thin films have been prepared by sputtering techniques, followed by a recrystallization treatment. These films can be used as sensing elements for pressure microsensors that have a semiconductor/ insulator/micromachined-silicon structure. Adjustments of the sensing-element properties, such as resistivity, gauge factor and temperature coefficients, can be made by doping with boron. Gauge factors (GFs) up to 30 and temperature coefficients of resistance (TCR) of 50 ppm/°C are feasible. Boron doping concentrations in the range 1 × 1018-1 × 1020 cm-3, corresponding to sheet resistances of 7 × 106-100 Ω/□, have been investigated. Grain sizes and crystallite orientation are also included as microstructural properties.",

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AU - Obieta, I.

AU - Gracia, F. J.

PY - 1994/4/15

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N2 - Polycrystalline silicon thin films have been prepared by sputtering techniques, followed by a recrystallization treatment. These films can be used as sensing elements for pressure microsensors that have a semiconductor/ insulator/micromachined-silicon structure. Adjustments of the sensing-element properties, such as resistivity, gauge factor and temperature coefficients, can be made by doping with boron. Gauge factors (GFs) up to 30 and temperature coefficients of resistance (TCR) of 50 ppm/°C are feasible. Boron doping concentrations in the range 1 × 1018-1 × 1020 cm-3, corresponding to sheet resistances of 7 × 106-100 Ω/□, have been investigated. Grain sizes and crystallite orientation are also included as microstructural properties.

AB - Polycrystalline silicon thin films have been prepared by sputtering techniques, followed by a recrystallization treatment. These films can be used as sensing elements for pressure microsensors that have a semiconductor/ insulator/micromachined-silicon structure. Adjustments of the sensing-element properties, such as resistivity, gauge factor and temperature coefficients, can be made by doping with boron. Gauge factors (GFs) up to 30 and temperature coefficients of resistance (TCR) of 50 ppm/°C are feasible. Boron doping concentrations in the range 1 × 1018-1 × 1020 cm-3, corresponding to sheet resistances of 7 × 106-100 Ω/□, have been investigated. Grain sizes and crystallite orientation are also included as microstructural properties.

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JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - 1-3

ER -

Sputtered silicon thin films for piezoresistive pressure microsensors

Abstract

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