Thin film technology applied to the development of a multilayer pressure sensor device

  • A. García-Alonso*
  • , E. Castaño
  • , I. Obieta
  • , J. Garcia
  • , FJ Gracia
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Thin film technology has been applied to the development of high-performance sensing devices based on nickel-chromium piezoresistive thin films. These sensing devices combine the high stability piezoresistive properties of an optimized NiCr metallic alloy with the high dielectric performance of a silicon dioxide thin layer, coating a stainless steel substrate. A complete production process, based on sputtering and photolithographic techniques, is proposed. The mechanical and electrical properties of the sensing device have been simultaneously optimized in order to obtain a highly reliable transducer.

Original languageEnglish
Pages (from-to)1103-1105
Number of pages3
JournalVacuum
Volume45
Issue number10-11
DOIs
Publication statusPublished - 1994
Externally publishedYes

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