Analysis of energy losses for SiC and Si diodes in half-bridge modules and future applications

M. Teresa Sierra*, Igor Gabiola, Ainhoa Pujana, Susana Apiñaniz, Pedro Ibañez

*Autor correspondiente de este trabajo

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

2 Citas (Scopus)

Resumen

The aim of this paper is to show the reduction in energy losses obtained through experimentation when making use of Silicon Carbide (SiC) diodes instead of Si ones. In order to make the comparison as much accurate as possible both diodes were developed applying the same bonding and package techniques and were tested under exactly the same working conditions. Experimental voltage and current waveforms during the switching process and energy losses measurements are shown in the paper.

Idioma originalInglés
Título de la publicación alojadaProceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011
EstadoPublicada - 2011
Evento2011 14th European Conference on Power Electronics and Applications, EPE 2011 - Birmingham, Reino Unido
Duración: 30 ago 20111 sept 2011

Serie de la publicación

NombreProceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011

Conferencia

Conferencia2011 14th European Conference on Power Electronics and Applications, EPE 2011
País/TerritorioReino Unido
CiudadBirmingham
Período30/08/111/09/11

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