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Delay time and Hartman effect in strain engineered graphene

  • Xi Chen
  • , Zhi Yong Deng
  • , Yue Ban
  • Shanghai University

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

23 Citas (Scopus)

Resumen

Tunneling times, including group delay and dwell time, are studied for massless Dirac electrons transmitting through a one-dimensional barrier in strain-engineered graphene. The Hartman effect, the independence of group delay on barrier length, is induced by the strain effect, and associated with the transmission gap and the evanescent mode. The influence of barrier height/length and strain modulus/direction on the group delay is also discussed, which provides the flexibility to control the group delay with applications in graphene-based devices. The relationship between group delay and dwell time is finally derived to clarify the nature of the Hartman effect.

Idioma originalInglés
Número de artículo173703
PublicaciónJournal of Applied Physics
Volumen115
N.º17
DOI
EstadoPublicada - 7 may 2014
Publicado de forma externa

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