Erratum: Cause of the fill factor loss of a-Si:H p-i-n devices with ZnO:Al front electrode: Blocking contact vs. defect density (Thin Solid Films (2013) 548 (617-622))

J. D. Santos; S. Fernández; J. Cárabe; J. J. Gandía

doi:10.1016/j.tsf.2013.12.027

Erratum: Cause of the fill factor loss of a-Si:H p-i-n devices with ZnO:Al front electrode: Blocking contact vs. defect density (Thin Solid Films (2013) 548 (617-622))

J. D. Santos
, S. Fernández
, J. Cárabe
, J. J. Gandía

CIEMAT

Producción científica: Contribución a una revista › Comentario/Debate

1 Cita (Scopus)

Idioma original	Inglés
Páginas (desde-hasta)	207
Número de páginas	1
Publicación	Thin Solid Films
Volumen	551
DOI	https://doi.org/10.1016/j.tsf.2013.12.027
Estado	Publicada - 31 ene 2014
Publicado de forma externa	Sí

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10.1016/j.tsf.2013.12.027

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author = "Santos, \{J. D.\} and S. Fern{\'a}ndez and J. C{\'a}rabe and Gand{\'i}a, \{J. J.\}",

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AU - Santos, J. D.

AU - Fernández, S.

AU - Cárabe, J.

AU - Gandía, J. J.

PY - 2014/1/31

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M3 - Comment/debate

AN - SCOPUS:84891704645

SN - 0040-6090

VL - 551

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JO - Thin Solid Films

JF - Thin Solid Films

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