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Evaluation of piezoelectric properties of Bi4Ti 3O12-based ceramics at high temperature

  • Marina Villegas*
  • , Amador C. Caballero
  • , Teresa Jardiel
  • , Carmen Aragó
  • , Jon Maudes
  • , Iñaki Caro
  • *Autor correspondiente de este trabajo
  • Campus de Cantoblanco
  • Universidad Autónoma de Madrid

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

22 Citas (Scopus)

Resumen

Nowadays many industries as aeronautic, aerospace, etc, are claiming for new sensors and actuators that can operate in hostile environments. PZT ceramics are the common materials used in piezoelectric devices, however their low Curie temperature prevents their use at high temperatures. Bi4Ti 3O12-based ceramics show a great potential for high temperature applications. Although piezoelectric parameters of BIT ceramics are well described at room temperature, its behaviour at high temperatures is almost lacking. This paper describes an experimental set-up to measure the piezoelectric properties of high temperature piezoceramics up to 700°C. The variation of piezoelectric parameters of W-doped BIT ceramics as a function of temperature indicates that their operating temperature extends up to 500°C, surpassing the expected one (1/2Tc) in more than 200°C.

Idioma originalInglés
Páginas (desde-hasta)44-53
Número de páginas10
PublicaciónFerroelectrics
Volumen393
N.º1
DOI
EstadoPublicada - 2009

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