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Noncollinear Magnetic Order in Two-Dimensional NiBr2Films Grown on Au(111)

  • Djuro Bikaljević*
  • , Carmen González-Orellana
  • , Marina Peña-Díaz
  • , Dominik Steiner
  • , Jan Dreiser
  • , Pierluigi Gargiani
  • , Michael Foerster
  • , Miguel Ángel Niño
  • , Lucía Aballe
  • , Sandra Ruiz-Gomez
  • , Niklas Friedrich
  • , Jeremy Hieulle
  • , Li Jingcheng
  • , Maxim Ilyn
  • , Celia Rogero
  • , José Ignacio Pascual*
  • *Autor correspondiente de este trabajo
  • CIC nanoGUNE
  • University of Innsbruck
  • CSIC UPV Centro de Fisica de Materials CFM
  • Paul Scherrer Institute
  • ALBA Synchrotron Light Source
  • Donostia International Physics Center

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

49 Citas (Scopus)

Resumen

Metal halides are a class of layered materials with promising electronic and magnetic properties persisting down to the two-dimensional limit. While most recent studies focused on the trihalide components of this family, the rather unexplored metal dihalides are also van der Waals layered systems with distinctive magnetic properties. Here we show that the dihalide NiBr2 grows epitaxially on a Au(111) substrate and exhibits semiconducting and magnetic behavior starting from a single layer. Through a combination of a low-temperature scanning-tunneling microscopy, low-energy electron diffraction, X-ray photoelectron spectroscopy, and photoemission electron microscopy, we identify two competing layer structures of NiBr2 coexisting at the interface and a stoichiometrically pure layer-by-layer growth beyond. Interestingly, X-ray absorption spectroscopy measurements revealed a magnetically ordered state below 27 K with in-plane magnetic anisotropy and zero-remanence in the single layer of NiBr2/Au(111), which we attribute to a noncollinear magnetic structure. The combination of such two-dimensional magnetic order with the semiconducting behavior down to the 2D limit offers the attractive perspective of using these films as ultrathin crystalline barriers in tunneling junctions and low-dimensional devices.

Idioma originalInglés
Páginas (desde-hasta)14985-14995
Número de páginas11
PublicaciónACS Nano
Volumen15
N.º9
DOI
EstadoPublicada - 28 sept 2021
Publicado de forma externa

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